The project focuses on improving the efficiency of self-commutated HVDC converters. This involves researching novel silicon IGBT (Insulated Gate Bipolar Transistor) and diodes in the voltage class of 3.3 kV to 6.5 kV, their integration into HVDC power modules, and innovative control concepts. ... more

At the University of Rostock, new testing procedures are being designed for the pilot lines, aimed at both reflecting future applications and reducing the testing effort. The goal is to replace the optical inspection of solder joints with electrical tests to achieve faster and more accurate testing. During this process, the test object will be heated through switching losses to enable rapid testing at operating temperature ... more

The energy transition on the generation side and the technological shift on the consumption side are leading to a deterioration of the stability of the electrical interconnected grid in various areas.

The highly fluctuating input from renewable generators endangers the balance between generated and consumed power – this becomes ... more

As part of the OTC Thruster project, which falls under the innovation field of OTC Subsea Mobility & Autonomy, a quiet and low-vibration hubless drive system will be researched and tested. This task arises partly due to the highly sensitive sensors installed on underwater vehicles, which can be disturbed by hydroacoustic noise ... more

The aim of the project is to improve the efficiency of converters for wind turbines, particularly in partial load conditions. Compared to the current state of the art, the project seeks to reduce the switching losses of power semiconductors, their conduction losses at low current, and the losses in inductors. ... more

Due to the globally increasing energy demand, a growing use of renewable energy is necessary to reduce carbon dioxide emissions. Efficient power semiconductors are needed for energy conversion, which is why the markets for IGBTs and modules are growing by about 15% annually. The most competitive IGBTs are based on 300mm silicon wafers, offering more than 1700 volts and higher power density. ... more