The project focuses on improving the efficiency of self-commutated HVDC converters. Through the research of novel Si-IGBTs and diodes in the voltage range of 3.3 kV to 6.5 kV, their integration into HVDC power modules, and innovative control concepts, the aim is to significantly reduce the power semiconductor losses in HVDC converters. The LowLoss IGBT technology aims to increase plasma concentration and improve channel conductivity. Control concepts involving desaturation pulses, field strength limitation, and short-circuit current limitation reduce switching losses and ensure high robustness.

In the sub-project at the University of Rostock, the new control concepts will be researched, and further potential for reducing conduction voltage will be explored.